Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
作者:
H. Amano,
N. Sawaki,
I. Akasaki,
Y. Toyoda,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 5
页码: 353-355
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96549
出版商: AIP
数据来源: AIP
摘要:
Atmospheric pressure metalorganic vapor phase epitaxial growth and characterization of high quality GaN on sapphire (0001) substrates are reported. Using AlN buffer layers, GaN thin films with optically flat surfaces free from cracks are successfully grown. The narrowest x‐ray rocking curve from the (0006) plane is 2.70’and from the (202¯4) plane is 1.86’. Photoluminescence spectra show strong near band edge emission. The growth condition dependence of crystalline quality is also studied.
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