Effect of spin-orbit interaction on the metal-insulator transition in doped silicon
作者:
M. Kaveh,
N.F. Mott,
期刊:
Philosophical Magazine Letters
(Taylor Available online 1987)
卷期:
Volume 56,
issue 3
页码: 97-102
ISSN:0950-0839
年代: 1987
DOI:10.1080/09500838708205256
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
We show that in disordered metallic systems, spin-orbit interactions lead to the existence of two metallic phases separated in temperature. The low-temperature metallic phase arises from spin-orbit interactions. The crossover temperature is proportional to (Z-Z′)2(Zis the atomic number of the donor andZ′that of the matrix) and is expected to be observable for donors with large atomic numbers. The presence of two metallic phases implies two mobility edges, existing at different temperatures, and affecting the conductivity when the Fermi energyEFlies below the mobility edgeEcWe thus predict anomalies in the conductivity in this range of concentration, consistent with the measurements of Long and Pepper on Si:Sb.
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