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Effect of spin-orbit interaction on the metal-insulator transition in doped silicon

 

作者: M. Kaveh,   N.F. Mott,  

 

期刊: Philosophical Magazine Letters  (Taylor Available online 1987)
卷期: Volume 56, issue 3  

页码: 97-102

 

ISSN:0950-0839

 

年代: 1987

 

DOI:10.1080/09500838708205256

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

We show that in disordered metallic systems, spin-orbit interactions lead to the existence of two metallic phases separated in temperature. The low-temperature metallic phase arises from spin-orbit interactions. The crossover temperature is proportional to (Z-Z′)2(Zis the atomic number of the donor andZ′that of the matrix) and is expected to be observable for donors with large atomic numbers. The presence of two metallic phases implies two mobility edges, existing at different temperatures, and affecting the conductivity when the Fermi energyEFlies below the mobility edgeEcWe thus predict anomalies in the conductivity in this range of concentration, consistent with the measurements of Long and Pepper on Si:Sb.

 

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