Defects induced by focused ion beam implantation in GaAs
作者:
Hideto Miyake,
Yoshihiko Yuba,
Kenji Gamo,
Susumu Namba,
Takao Shiokawa,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1988)
卷期:
Volume 6,
issue 3
页码: 1001-1005
ISSN:0734-211X
年代: 1988
DOI:10.1116/1.584335
出版商: American Vacuum Society
关键词: ION IMPLANTATION;FOCUSING;CRYSTAL DEFECTS;ELECTRICAL PROPERTIES;PHYSICAL RADIATION EFFECTS;GALLIUM ARSENIDES;SILICON IONS;GALLIUM IONS;HIGH TEMPERATURE;MICROELECTRONICS;FABRICATION;ACTIVATION ENERGY;GaAs
数据来源: AIP
摘要:
The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation inn‐GaAs have been investigated by means of deep‐level transient spectroscopy (DLTS),C–Vcarrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 °C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 °C, except for a sample of Ga implantation with a dose higher than 1014/cm2. For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 1013/cm2.
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