Internal photoluminescence and lifetime of light-emitting diodes on conductive ZnSe substrates
作者:
H. Wenisch,
M. Fehrer,
K. Ohkawa,
D. Hommel,
M. Prokesch,
U. Rinas,
H. Hartmann,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 9
页码: 4690-4692
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.366211
出版商: AIP
数据来源: AIP
摘要:
We report on the molecular beam epitaxial growth of green (508 nm) and blue (489 nm) light-emitting diodes (LEDs) on conductive ZnSe substrates. The resistivity of the (001)-oriented ZnSe wafers was drastically reduced by a zinc extraction treatment to typical values of1×10−1 &OHgr; cm.The intensity of an additional orange band around 600 nm observed in electroluminescence depends strongly on the wavelength of the multi-quantum-well emission. This can be explained by absorption and effective re-emission in the substrate material named internal photoluminescence and was confirmed by transmission and photoluminescence experiments with the bare substrates. The LEDs with lifetimes up to 100 hours proofed to be surprisingly stable compared to the structures on undoped ZnSe substrates grown before. ©1997 American Institute of Physics.
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