Raman analysis of Si/Ge strained‐layer superlattices under hydrostatic pressure
作者:
Zhifeng Sui,
Irving P. Herman,
Joze Bevk,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 21
页码: 2351-2353
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104894
出版商: AIP
数据来源: AIP
摘要:
Raman scattering was used to study optical phonons in a Si12Ge4strained‐layer superlattice onc‐Si(001) that was subjected to hydrostatic pressure at room temperature. The change of phonon frequency with pressure,d&ohgr;/dP, for the principal quasi‐confined LO mode in the Ge layers, is found to be significantly smaller than that for bulk crystalline Ge. This difference is shown to be due to the tuning of biaxial strain in the Ge layers and the pressure response of the confined mode as hydrostatic pressure is varied. Both strain and confinement make comparable contributions tod&ohgr;/dPfor the Ge layers in the superlattice examined here.
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