Novel metalorganic route for fabrication ofBaTiO3thin ferroelectric films
作者:
S. Nourbakhsh,
I. Vasilyeva,
J. N. Carter,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 21
页码: 2804-2806
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113481
出版商: AIP
数据来源: AIP
摘要:
A novel diol based metalorganic route has been developed and employed to deposit BaTiO3films on Si and Pt coated Si substrates. Differential thermal analysis, thermogravimetric analysis, x‐ray photoelectron spectroscopy, and x‐ray diffraction collectively indicated that BaTiO3was formed through the reaction of Ba and Ti oxides at approximately 500 °C. The films were single phase, had no crystallographic texture, and contained no detectable impurities. ©1995 American Institute of Physics.
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