Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates
作者:
C. H. Qiu,
M. W. Leksono,
J. I. Pankove,
J. T. Torvik,
R. J. Feuerstein,
F. Namavar,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 5
页码: 562-564
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114013
出版商: AIP
数据来源: AIP
摘要:
The cathodoluminescence (CL) of erbium and oxygen coimplanted GaN (GaN:Er:O) and sapphire (sapphire:Er:O) was studied as a function of temperature. Following annealing, the 1.54 &mgr;m intra‐4f‐shell emission line was observed in the temperature range of 6–380 K. As the temperature increased from 6 K to room temperature, the integrated intensity of the infrared peak decreased by less than 5% for GaN:Er:O, while it decreased by 18% for sapphire:Er:O. The observation of minimal thermal quenching by CL suggests that Er and O doped GaN is a promising material for electrically pumped room‐temperature optical devices emitting at 1.54 &mgr;m. ©1995 American Institute of Physics.
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