Condensation of bombarding gallium ions on a silicon surface
作者:
T. Ishitani,
A. Shimase,
H. Tamura,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 39,
issue 8
页码: 627-628
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92827
出版商: AIP
数据来源: AIP
摘要:
Direct observation of bombarding 5–15‐keV Ga+ion condensation on a Si target is achieved using a scanning ion microscope with a liquid‐Ga ion source. The liquidlike pieces of condensed Ga move about easily to join or split. Condensation takes place beyond a critical ion dose, which is roughly explained by an implanted‐ion build‐up model.
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