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Buried convex waveguide structure (GaAl) As injection lasers

 

作者: K. Shima,   K. Hanamitsu,   T. Fujiwara,   M. Takusagawa,  

 

期刊: Applied Physics Letters  （AIP Available online 1981）
卷期: Volume 38, issue 8  

页码: 605-607

 

ISSN:0003-6951

 

年代: 1981

 

DOI:10.1063/1.92449

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new channeled substrate (GaAl)As double‐heterostructure laser with mode control as well as internal current confinement is described. The narrow active region (3–3.5 mm) surrounded by GaAlAs is buried in the etched channel, around which a reverse‐biased heterojunction is formed. The threshold current is as low as 20 mA cw, and highly stable fundamental‐mode lasing is observed.

 

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