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Semiconducting Properties of Inorganic Amorphous Materials

 

作者: H. L. Uphoff,   J. H. Healy,  

 

期刊: Journal of Applied Physics  (AIP Available online 1961)
卷期: Volume 32, issue 5  

页码: 950-954

 

ISSN:0021-8979

 

年代: 1961

 

DOI:10.1063/1.1736139

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Ten compositions were prepared in the systems As:Se:Te and As:S:Te. Nine of these compositions were amorphous in structure. The resistivities and Seebeck coefficients of these materials were measured as functions of temperature. The resistivity varied exponentially with temperature, while the Seebeck coefficient varied linearly. At 298°K, the resistivity values for the amorphous samples ranged from 4.7×104−2.5×1013ohm‐cm, while the Seebeck coefficient values ranged from 830–1625 &mgr;v/°K (ptype). At any temperature, the resistivity decreased with increase in tellurium content. For the amorphous materials, the thermal conductivity values ranged from 2.4–4.4 mw/cm‐°K.

 

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