Strong Hall voltage modulation in hybrid ferromagnet/semiconductor microstructures
作者:
F. G. Monzon,
Mark Johnson,
M. L. Roukes,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 21
页码: 3087-3089
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120254
出版商: AIP
数据来源: AIP
摘要:
We present a new magnetoelectronic device consisting of a &mgr;m-scale semiconductor cross junction and a patterned, electrically isolated, ferromagnetic overlayer with in-plane magnetization. The large local magnetic field emanating from the edge of the thin ferromagnetic film has a strong perpendicular magnetic component,B⊥(r),which induces a Hall resistance,RH,in the microjunction. External application of a weak in-plane magnetic field reverses the magnetization of the ferromagnet and with itB⊥(r),thus modulatingRH.Our data demonstrate that this strong “local” Hall effect is operative at both cryogenic and room temperatures, and is promising for device applications such as field sensors or integrated nonvolatile memory cells. ©1997 American Institute of Physics.
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