Etching of GaAs/AlGaAs by bisdimethylaminochlorarsine
作者:
Naoya Okamoto,
Hitoshi Tanaka,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1998)
卷期:
Volume 16,
issue 1
页码: 96-99
ISSN:0734-2101
年代: 1998
DOI:10.1116/1.581017
出版商: American Vacuum Society
数据来源: AIP
摘要:
We report on the etching characteristics of GaAs and AlGaAs by gas source molecular beam epitaxy (GSMBE) using a new precursor bisdimethylaminochloroarsine (BDMAAsCl). The etching rate of GaAs is linearly dependent on the BDMAAsCl flow rate. The activation energy of GaAs etching was 0.25 eV. However,Al0.28Ga0.72Asetching shows the negative activation energy of−0.29 eVat the substrate temperature below 500 °C. The etchings of GaAs and AlGaAs are probably attributed to the formation of GaCl andAlCl2orAlCl3,respectively. Furthermore, we demonstrated that the BDMAAsCl etching remarkably reduced the interfacial impurity (carbon, oxygen, silicon) density of GSMBE-grown GaAs epilayers/epireadysubstrates by one order of magnitude compared with trisdimethylaminoarsine cleaning only.
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