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Relative Influence of Majority and Minority Carriers on Excess Noise in Semiconductor Filaments

 

作者: Leon Bess,  

 

期刊: Journal of Applied Physics  (AIP Available online 1955)
卷期: Volume 26, issue 11  

页码: 1377-1381

 

ISSN:0021-8979

 

年代: 1955

 

DOI:10.1063/1.1721911

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An experiment has been devised whereby excess noise is measured along various different directions in a germanium filament after the directions of current flow for the majority and minority carriers had been altered by a magnetic field. From this experiment it is possible to determine that whereas shot noise is caused by both majority and minority carrier fluctuation, 1/fnoise is essentially produced only by majority carrier fluctuation.

 

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