Implantations of49BF+2ions at 35 and 50 keV have been performed in thin films of cobalt and the resulting11B+profiles have been measured by low energy secondary ion mass spectrometry (SIMS). Careful crater depth measurements as a function of sputtering time revealed that under 3.0 keV32O+2ion bombardment the erosion rate at the surface was ∼70% higher than that in the ‘‘bulk.’’ A correction procedure was applied for determining the true depth of the measured boron distributions, and values of the projected range and the parallel straggling were extracted from the SIMS profiles. By using measured range data for boron in Si, Bragg’s rule was applied for calculating the corresponding values for boron distributions in CoSi2. The results are compared with measured profiles in CoSi2thin films and theoretical predictions based on Monte Carlo simulations.