Correlation of Raman and optical studies with atomic force microscopy in porous silicon
作者:
Adam A. Filios,
Susan S. Hefner,
Raphael Tsu,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1996)
卷期:
Volume 14,
issue 6
页码: 3431-3435
ISSN:1071-1023
年代: 1996
DOI:10.1116/1.588775
出版商: American Vacuum Society
关键词: Si
数据来源: AIP
摘要:
Atomic force microscopy images of porous silicon samples prepared with different conditions have been correlated with photoluminescence (PL) and Raman spectra, allowing a clear classification of two types of samples, ‘‘gently’’ etched versus ‘‘heavily’’ etched. The gently etched samples show a significantly improved morphology and uniformity, as well as consistent correlation in PL and Raman results with the quantum confinement model for the light emission.
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