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Correlation of Raman and optical studies with atomic force microscopy in porous silicon

 

作者: Adam A. Filios,   Susan S. Hefner,   Raphael Tsu,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  (AIP Available online 1996)
卷期: Volume 14, issue 6  

页码: 3431-3435

 

ISSN:1071-1023

 

年代: 1996

 

DOI:10.1116/1.588775

 

出版商: American Vacuum Society

 

关键词: Si

 

数据来源: AIP

 

摘要:

Atomic force microscopy images of porous silicon samples prepared with different conditions have been correlated with photoluminescence (PL) and Raman spectra, allowing a clear classification of two types of samples, ‘‘gently’’ etched versus ‘‘heavily’’ etched. The gently etched samples show a significantly improved morphology and uniformity, as well as consistent correlation in PL and Raman results with the quantum confinement model for the light emission.

 

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