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Comment on ‘‘Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor‐phase epitaxy’’ [J. Appl. Phys.57, 249 (1985)]

 

作者: I. C. Noyan,   Armin Segmu¨ller,  

 

期刊: Journal of Applied Physics  （AIP Available online 1986）
卷期: Volume 60, issue 8  

页码: 2980-2981

 

ISSN:0021-8979

 

年代: 1986

 

DOI:10.1063/1.337772

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The proper elastic equations for an epitaxial bilayer system are presented, amending an earlier paper published by other authors in this journal. The stress profile normal to the surface and the radius of curvature are given as functions of the epitaxial mismatch.

 

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