Junction characteristics of Ga0.5In0.5Pn+pdiodes and solar cells
作者:
K. C. Reinhardt,
Y. K. Yeo,
R. L. Hengehold,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 77,
issue 11
页码: 5763-5772
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359221
出版商: AIP
数据来源: AIP
摘要:
Forward and reverse bias dark current characteristics ofn+pmesa diodes and solar cells fabricated from metalorganic chemical vapor deposition grown Ga0.5In0.5P have been examined, and dark current behavior has been correlated with Ga0.5In0.5P solar cell conversion efficiency. Dependencies of dominant dark currents on voltage, temperature, and doping density were found to be consistent with recombination theory. Recombination dark current with an ideality factor ofA=1.9–2.1 was dominant in the voltage range of ∼0.5 to 1.5 V and ∼0.8 to 1.2 V for devices with ap‐base doping density of ∼1016and 1017cm−3, respectively. Reverse current‐voltage‐temperature measurements identified two dominant deep levels at 0.10 and ∼0.45 eV relative to either the valence‐ or conduction‐band minimum. The carrier recombination was found to occur through these deep level centers in then+pjunction.
点击下载:
PDF
(1252KB)
返 回