The electrical transport properties of splat‐cooled amorphous semiconductors In20Te80, Ga20Te80, and Ge15Te85were investigated by measuring the thermoelectric powerSand dc resistivity &rgr; between 140 and 300 °K. For as‐quenched samples, bothSand log&rgr; show linear relationships with 1/T, indicating ap‐type intrinsiclike conduction ≳90&percent; due to holes. To account for this intrinsiclike conduction, we propose a high degree of structural integrity in the splat‐cooled amorphous samples, i.e., a structure having the homogeneity of the liquid and consisting of continuous Te chains with In, Ga, and Ge attached to broken bonds. However, annealed samples show extrinsiclike conduction from 0 to −130 °C, and bothSand log&rgr; show decrease linearly with respect to the decrease of temperatureT. The effect of heat treatment interpreted as a structural disordering, appears due to atomic segregation at local areas.