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Optical characterization of thin silicon films deposited by CVD and annealed by pulsed laser

 

作者: M.O. Lampert,   J.P. Ponpon,   R. Stuck,   P. Siffert,  

 

期刊: Radiation Effects  （Taylor Available online 1982）
卷期: Volume 63, issue 1-4  

页码: 169-173

 

ISSN:0033-7579

 

年代: 1982

 

DOI:10.1080/00337578208222835

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Polycrystalline Si layers 100 to 800 nm thick have been deposited on Si single crystal substrates by CVD and annealed with a Q-switched ruby laser at energies up to 1.5 J/cm2. The optical characteristics of these layers have been measured by SEM and ellipsometry. The results can be attributed to a change in surface roughness with film thickness and laser energy.

 

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