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Polycide reactive ion etch: Enhanced circuit performance through profile modification

 

作者: S. S. Roth,   M. Cullen,   J. Reyes,   M. Taylor,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1989）
卷期: Volume 7, issue 3  

页码: 551-555

 

ISSN:0734-211X

 

年代: 1989

 

DOI:10.1116/1.584783

 

出版商: American Vacuum Society

 

关键词: VLSI;FABRICATION;ETCHING;SILICIDES;POLYMERS;HYDROCHLORIC ACID;CARBON FLUORIDES;WSi2;Si

 

数据来源: AIP

 

摘要:

A three step, ‘‘profile flexible’’ polycide etch was developed which allowed polycide profiles ranging from vertical to controlled undercut. A pressure controlled HCl+CF4overetch was achieved which enabled profile adjustment as desired. Vertical and undercut (0.25 μ per side) polycide profiles were fabricated and speed comparisons accomplished. The majority of devices with undercut profiles exhibited an increase in speed from 20.8 to 23.8 MHz as compared to those devices with vertical profiles.

 

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