Photoconductivity and electronic doping effects in hydrogenated amorphous silicon
作者:
T. J. McMahon,
A. Madan,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 57,
issue 12
页码: 5302-5305
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.334845
出版商: AIP
数据来源: AIP
摘要:
The concept of electronic doping is used to explain unexpectedly large values of the diode quality factor (exceeding two) and supralinearity which is sometimes observed in amorphous siliconp‐i‐n‐type diodes and materials, respectively. This suggests the presence of an extra set of defect states in lightly boron‐doped films with a capture rate for electrons which is much larger than that of the inherent defect states. We also report that for high‐quality undoped intrinsic layers, the photoconductivity versus intensity behavior exhibits sublinear power dependence which increases with intensity in distinct contrast to the previously reported results. We provide a self‐consistent model which is able to explain the above observations.
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