Temperature dependence of electromigration dynamics in Al interconnects by real-time microscopy
作者:
J. A. Prybyla,
S. P. Riege,
S. P. Grabowski,
A. W. Hunt,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 8
页码: 1083-1085
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122091
出版商: AIP
数据来源: AIP
摘要:
Real-time transmission electron microscopy (TEM) was used to directly examine the temperature dependence of electromigration-induced void and failure dynamics over the range 200–350 °C. The studies were done using submicron Al interconnects and a special sample stage, which allowed TEM observations to be recorded while heating and passing current through the sample. A novel sample design dramatically minimized any Joule heating in the runners. Our experiments directly reveal that the mechanism responsible for void and failure dynamics at temperatures <250 °C is distinctly different from that at higher temperatures. These results have implications regarding methods used for predicting electromigration reliability at use conditions from accelerated test data. ©1998 American Institute of Physics.
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