Far-infrared photoconductivity in self-organized InAs quantum dots
作者:
J. Phillips,
K. Kamath,
P. Bhattacharya,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 16
页码: 2020-2022
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121252
出版商: AIP
数据来源: AIP
摘要:
We report far-infrared photoconductivity in self-organized InAs/GaAs quantum dots grown by molecular beam epitaxy. Through use of a Fourier transform infrared spectrometer, a photoconductivity signal peaked at 17 &mgr;m is observed from an–i–ndetector structure with doped InAs quantum dots in the intrinsic region. Comparison of photoluminescence and band-to-band photocurrent absorption spectra suggests the far-infrared response is due to intersubband transitions in the quantum dots. ©1998 American Institute of Physics.
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