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Proximity‐effect correction with linear programming

 

作者: Allen M. Carroll,  

 

期刊: Journal of Applied Physics  （AIP Available online 1981）
卷期: Volume 52, issue 1  

页码: 434-437

 

ISSN:0021-8979

 

年代: 1981

 

DOI:10.1063/1.329802

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new method for computing proximity‐effect corrections for submicrometer electron beam lithography is introduced. It is based on a two‐parameter resist development model and the restatement of the proximity‐effect problem as a linear programming problem. Example solutions in several relevant physical regimes are presented.

 

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