The use of IrOxfor electrodes in PbZrxTi1−xO3(PZT) capacitors for ferroelectric memory applications has proven to be advantageous in several respects. In comparison with Pt, IrOxoften exhibits improved fatigue and provides resistance to hydrogen induced degradation at elevated temperatures. Since IrOxis often produced by sputtering in an oxygen containing environment, several forms of IrOxcan be produced depending on the process conditions. This work concentrates on an analysis of the DC reactive sputtering of IrOxfrom an Ir metal target. As with other oxidizable metals, Ir exhibits a transition between metal and oxide mode sputtering when sputtered in oxygen containing atmospheres. Variations in the Ar/O2gas flow ratio were used to produce Ir and IrOxfilms on both sides of the metal-to-oxide mode reactive sputtering transition. Changes in the IrOxfilm properties were quantified by using a combination of metrics including X-ray diffraction, sheet resistance, and stress. It was found that the, IrOxcrystalline structure and other IrOxproperties could be directly related to the ferroelectric switching performance of PZT capacitors with IrOxtop electrodes. A relationship between IrOxdeposition processes and resistance to etch induced damage of the ferroelectric properties was also observed.