InAsSb‐based mid‐infrared lasers (3.8–3.9 &mgr;m) and light‐emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition
作者:
A. A. Allerman,
R. M. Biefeld,
S. R. Kurtz,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 4
页码: 465-467
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.118141
出版商: AIP
数据来源: AIP
摘要:
Gain‐guided, injection lasers using AlAsSb for optical confinement and a strained InAsSb/InAs multiquantum well active region were grown by metalorganic chemical vapor deposition. The semi‐metal properties of ap‐GaAsSb/n‐InAs heterojunction are utilized as a source for injection of electrons into the active region of the laser. In pulsed mode, the laser operated up to 210 K with an emission wavelength of 3.8–3.9 &mgr;m. We also report on the two‐color emission of a light‐emitting diode with two different active regions to demonstrate multistage operation of these ‘‘unipolar ’’ devices. ©1996 American Institute of Physics.
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