Scanning tunneling microscopy on cleaved Si(111) surfaces reveals stress‐induced microstructures with two types of terraces: triangular‐shaped terraces and long and narrow terraces with parallel [112¯] oriented steps, which is contrary to the previous observation [1¯1¯2] steps. Dimer rows in Si(111) 2×1 structures are found on the triangular terraces. On the parallel‐stepped terraces, rows run in the [112¯] direction and their separation was appreciably smaller than that of the dimer rows in the 2×1 structure. A new model for this structure is proposed.