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Lateral analysis of conventional and field-induced junction solar cells

 

作者: Z.Meglicki,   A.G.Nassibian,   E.L.Heasell,  

 

期刊: IEE Proceedings J (Optoelectronics)  （IET Available online 1986）
卷期: Volume 133, issue 2  

页码: 149-154

 

年代: 1986

 

DOI:10.1049/ip-j.1986.0024

 

出版商: IEE

 

数据来源: IET

 

摘要:

We examine the flow of current, parallel to the front surface, in the conventional p-n junction and in the field induced junction (FIJ) solar cell. The influence of grid finger spacing and gate voltage (FIJ cell) are studied, and the I-V characteristics of the cells computed. An algorithm for the determination of the optimum finger spacing is demonstrated.

 

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