Population inversion in optically pumped asymmetric quantum well terahertz lasers
作者:
P. Harrison,
R. W. Kelsall,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 11
页码: 7135-7140
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365310
出版商: AIP
数据来源: AIP
摘要:
Intersubband carrier lifetimes and population ratios are calculated for three- and four-level optically pumped terahertz laser structures. Laser operation is based on intersubband transitions between the conduction band states of asymmetricGaAs-Ga1−xAlxAsquantum wells. It is shown that the carrier lifetimes in three-level systems fulfill the necessary conditions for stimulated emission only at temperatures below 200 K. The addition of a fourth level, however, enables fast depopulation of the lower laser level by resonant longitudinal optical phonon emission and thus offers potential for room temperature laser operation. ©1997 American Institute of Physics.
点击下载:
PDF
(178KB)
返 回