Avalanche Breakdown in Epitaxial SiCp‐nJunctions
作者:
C. van Opdorp,
J. Vrakking,
期刊:
Journal of Applied Physics
(AIP Available online 1969)
卷期:
Volume 40,
issue 5
页码: 2320-2322
ISSN:0021-8979
年代: 1969
DOI:10.1063/1.1657980
出版商: AIP
数据来源: AIP
摘要:
The reverse current‐voltage characteristics of epitaxial SiCp‐njunctions were investigated. After electrolytic etching the junctions showed sharp breakdown. The largest value found for the maximum field at breakdown is 5×106V/cm. Microplasma pulses were observed analogous to but three orders‐of‐magnitude smaller than those hitherto reported for other materials.
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