Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application toSi+-implanted InP
作者:
L. Artu´s,
R. Cusco´,
J. Iba´n˜ez,
J. M. Martin,
G. Gonza´lez-Di´az,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 8
页码: 3736-3739
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365753
出版商: AIP
数据来源: AIP
摘要:
We have studied the lattice recovery by rapid thermal annealing ofSi+-implanted InP using Raman spectroscopy. The crystallinity recovery for different annealing temperatures of samples totally amorphized by the implantation can be monitored by means of their Raman spectra. However, free-charge coupling with the LO mode and possible misorientation of the recrystallized material may alter substantially the first-order Raman spectrum, making it unreliable for a good characterization of the lattice recovery. The study of second-order Raman spectrum overcomes the problems present in the analysis of first-order Raman spectrum and provides suitable criteria to assess the recrystallization of the implanted and annealed samples. After rapid thermal annealing at 875 °C for 10 s, the intensity of the second-order peaks approaches 70&percent; of its value in virgin InP, and third-order Raman peaks are also clearly detected, evidencing the good lattice recovery achieved. ©1997 American Institute of Physics.
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