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Carrier removal and defect behavior inp‐type InP

 

作者: I. Weinberg,   C. K. Swartz,   P. J. Drevinsky,  

 

期刊: Journal of Applied Physics  (AIP Available online 1992)
卷期: Volume 72, issue 11  

页码: 5509-5511

 

ISSN:0021-8979

 

年代: 1992

 

DOI:10.1063/1.351946

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates inp‐type InP after irradiation by 1‐MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep‐level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant inp‐type InP.

 

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