Carrier removal and defect behavior inp‐type InP
作者:
I. Weinberg,
C. K. Swartz,
P. J. Drevinsky,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 72,
issue 11
页码: 5509-5511
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.351946
出版商: AIP
数据来源: AIP
摘要:
A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates inp‐type InP after irradiation by 1‐MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep‐level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant inp‐type InP.
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