首页   按字顺浏览 期刊浏览 卷期浏览 Critical thickness in epitaxial CdTe/ZnTe
Critical thickness in epitaxial CdTe/ZnTe

 

作者: J. Cibert,   Y. Gobil,   Le Si Dang,   S. Tatarenko,   G. Feuillet,   P. H. Jouneau,   K. Saminadayar,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 56, issue 3  

页码: 292-294

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.102812

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The critical thickness for coherent growth of CdTe on ZnTe by molecular beam epitaxy is assessed by reflection high‐energy electron diffraction, low‐temperature photoluminescence, and transmission electron microscopy. The value is found to be 5 monolayers for this high mismatch system (6%). As opposed to similar studies on III‐V and Si‐Ge systems, there is no evidence of island formation before relaxation by dislocations at the interface.

 

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