The effects of Ti deposition temperature on the resistivity of as‐deposited films are reported. The microstructure of as‐deposited Ti films and its effect on electrical properties of TiSixformed during subsequent thermal annealing are investigated. Our work shows that the film deposition temperature not only affects the resistivity of as‐deposited film but also influences the resistivity of TiSixformed during thermal anneals. The microstructure, specifically the grain size, of as‐deposited Ti films appears to be the controlling factor in formation of TiSixphases. ©1995 American Institute of Physics.