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Electrical transport of holes in GaAs/InGaAs/GaAs single strained quantum wells

 

作者: I. J. Fritz,   T. J. Drummond,   G. C. Osbourn,   J. E. Schirber,   E. D. Jones,  

 

期刊: Applied Physics Letters  （AIP Available online 1986）
卷期: Volume 48, issue 24  

页码: 1678-1680

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.96803

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report electrical transport data for holes in single strained quantum well structures of the type GaAs/InxGa1−xAs/GaAs withx≊0.2. With modulation doping, 4 K mobilities of ∼3×104cm2/V s have been achieved. This value is near that attained for electrons in comparable structures, illustrating the enhanced transport possible due to the strain‐induced light‐hole planar mass.

 

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