Deep level defects in electron-irradiated4HSiC epitaxial layers
作者:
C. Hemmingsson,
N. T. Son,
O. Kordina,
J. P. Bergman,
E. Janze´n,
J. L. Lindstro¨m,
S. Savage,
N. Nordell,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 9
页码: 6155-6159
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364397
出版商: AIP
数据来源: AIP
摘要:
Deep level defects in electron-irradiated4HSiC epitaxial layers grown by chemical vapor deposition were studied using deep level transient spectroscopy. The measurements performed on electron-irradiatedp+njunctions in the temperature range 100–750 K revealed several electron traps and one hole trap with thermal ionization energies ranging from 0.35 to 1.65 eV. Most of these defects were already observed at a dose of irradiation as low as≈5×1013 cm−2.Dose dependence and annealing behavior of the defects were investigated. For two of these electron traps, the electron capture cross section was measured. From the temperature dependence studies, the capture cross section of these two defects are shown to be temperature independent. ©1997 American Institute of Physics.
点击下载:
PDF
(157KB)
返 回