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Direct oxinitride synthesis by multipulse excimer laser irradiation of silicon wafers in a nitrogen‐containing ambient environment

 

作者: V. Cra˘ciun,   I. N. Miha˘ilescu,   Gh. Oncioiu,   A. Luches,   M. Martino,   V. Nassisi,   E. Radiotis,   A. V. Drigo,   S. Ganatsios,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 68, issue 5  

页码: 2509-2511

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.346518

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The direct synthesis of silicon oxinitride films by multipulse excimer (&lgr;=308 nm) laser irradiation in a nitrogen‐containing ambient gas is reported featuring characteristics consistent with potential application in microelectronics.

 

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