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Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow‐rate modulation epitaxy

 

作者: W. K. Chen,   J. F. Chen,   J. C. Chen,   H. M. Kim,   L. Anthony,   C. R. Wie,   P. L. Liu,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 55, issue 8  

页码: 749-751

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.101795

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow‐rate modulation epitaxy to grow the interface layer in a two‐step process, we can improve the quality of heteroepitaxy films. The full widths at half maximum of the x‐ray rocking curve and the 10 K photoluminescence spectrum for a 6.2‐&mgr;m‐thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.

 

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