By means of r.f. sputtering the polycrystalline Pb(Zr0.53Ti0.45W0.01Cd0.01)O3ferroelectric thin films ofdf= (0.5 − 10) μm in thickness have been obtained. A disk ceramics obtained by hot pressing method or a layer of powdered ceramic samples was used as a target. On the basis of structure analysis by X-ray diffraction conditions which are necessary for obtaining thin ferroelectric, stoichiometric films having a perovskite-type structure have been determined. Regions of amorphous film deposition, pyrochlore-type structure or mixture of pyrochlore-type and perovskite-type structure are also presented in diagram “working gas pressureversussubstrate temperature” (p02-Ts). New experimental data on pyrochlore-type structure metastability and its conversion into perovskite-type structure caused by thermal treatment are obtained.