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A simple technique for the separation of bulk and surface recombination parameters in silicon

 

作者: E. Gaubas,   J. Vanhellemont,  

 

期刊: Journal of Applied Physics  (AIP Available online 1996)
卷期: Volume 80, issue 11  

页码: 6293-6297

 

ISSN:0021-8979

 

年代: 1996

 

DOI:10.1063/1.363705

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A simple method for the separation of bulk and surface recombination parameters, based on the simultaneous control of time and amplitude characteristics of carrier concentration decay, is presented. To enhance the precision of the parameter extraction procedure, the amplitude is determined using a wavelength resulting in near surface carrier excitation while the effective lifetime is measured for homogeneous bulk excitation. For the fast interpretation of experimental data, a technique using nomographs of amplitude–decay time correlated dependencies on modulation depth is proposed. ©1996 American Institute of Physics.

 

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