A simple technique for the separation of bulk and surface recombination parameters in silicon
作者:
E. Gaubas,
J. Vanhellemont,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 80,
issue 11
页码: 6293-6297
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.363705
出版商: AIP
数据来源: AIP
摘要:
A simple method for the separation of bulk and surface recombination parameters, based on the simultaneous control of time and amplitude characteristics of carrier concentration decay, is presented. To enhance the precision of the parameter extraction procedure, the amplitude is determined using a wavelength resulting in near surface carrier excitation while the effective lifetime is measured for homogeneous bulk excitation. For the fast interpretation of experimental data, a technique using nomographs of amplitude–decay time correlated dependencies on modulation depth is proposed. ©1996 American Institute of Physics.
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