High conductivityp‐type CdS was formed by ion implanting Bi inton‐type single crystals. Hall measurements and lifetime studies were performed on the implanted layers.p‐njunctions were formed in high conductivityn‐type material and light emission observed in the forward direction. By making two independent contacts to thep‐type layer and measuring theirI‐Vcharacteristics, it was determined that they were not rectifying.