We present evidence that the energy introduced by a short laser pulse focused to high intensity on a small spot on the surface of neutron-transmutation-doped silicon electrically activates impurities far away from the focal spot. The activation of the impurities is measured by far-infrared spectroscopy of shallow donor levels and by magnetotransport characterization. Electrical activity is comparable to that obtained with conventional thermal annealing. X-ray rocking curve measurements show strain in the area of the focal spot, but none at large distances from the focal spot. ©1997 American Institute of Physics.