Room‐temperature interfacial reaction in Au‐semiconductor systems
作者:
A. Hiraki,
K. Shuto,
S. Kim,
W. Kammura,
M. Iwami,
期刊:
Applied Physics Letters
(AIP Available online 1977)
卷期:
Volume 31,
issue 9
页码: 611-612
ISSN:0003-6951
年代: 1977
DOI:10.1063/1.89799
出版商: AIP
数据来源: AIP
摘要:
Au(evaporated film) ‐semiconductor(substrate) systems were studied by Auger electron spectroscopy. For semiconductors with energy gaps (Eg) smaller than ∼2.5 eV, even at room temperature a considerable fraction of atoms constituting the semiconductors were found to accumulate on the surfaces of Au films, indicating ready interfacial interaction between these materials. Study of the interface regions of the above systems verified the occurrence of the room‐temperature interfacial reactions.
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