Comparison of high quality (111)B and (100) AlGaAs grown by molecular beam epitaxy
作者:
Albert Chin,
Paul Martin,
Jim Ballingall,
Tan‐Hua Yu,
John Mazurowski,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 19
页码: 2394-2396
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106409
出版商: AIP
数据来源: AIP
摘要:
State‐of‐the‐art quality Al0.3Ga0.7As was achieved on both (111)B and (100) GaAs by molecular beam epitaxy. Low‐temperature photoluminescence linewidths of 2.9 and 2.4 meV were obtained for (111)B and (100) Al0.3Ga0.7As, grown at 650 and 700 °C, respectively, with nearly equivalent integrated luminescence intensity. This is the narrowest linewidth ever reported for (111) AlGaAs. The low growth temperature and high material quality of (111)B Al0.3Ga0.7As is expected to be an important factor to the future development of both electronic and optical heterostructure devices.
点击下载:
PDF
(333KB)
返 回