Simulation of various diffusion processes in implanted silicon
作者:
E. Antoncik,
期刊:
Radiation Effects and Defects in Solids
(Taylor Available online 1994)
卷期:
Volume 129,
issue 3-4
页码: 301-313
ISSN:1042-0150
年代: 1994
DOI:10.1080/10420159408229030
出版商: Taylor & Francis Group
关键词: implantation;diffusion;thermal annealing
数据来源: Taylor
摘要:
A simple mathematical model based on a system of reaction-diffusion equations makes it possible to study the influence of defect interactions on effective diffusion of implanted impurities and to determine the broadening of the impurity profiles during annealing. It is shown that special initial conditions may give rise to anomalous diffusion processes, e.g., the transient diffusion. The effective diffusion coefficient and its dependence on reaction constants is discussed under the assumption that the as-implanted profile has a δ-function or an LSS form.
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