The effects of radiation-induced deep levels on the admittance ofp+ndiodes under forward bias
作者:
P.J. Strong,
M.J. Howes,
D.V. Morgan,
期刊:
Radiation Effects
(Taylor Available online 1977)
卷期:
Volume 34,
issue 4
页码: 241-245
ISSN:0033-7579
年代: 1977
DOI:10.1080/00337577708233153
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
A simple equivalent circuit is presented which predicts the small-signal admittance-voltage characteristics of siliconp*njunction diodes under forward bias conditions. Deep levels are introduced into the diodes by irradiation with carbon ions or thermal neutrons, and the effects on these characteristics are discussed in terms ot” the equivalent circuit. The drastic changes observed in the C-V characteristic are attributed to enhanced carrier recombination resulting from the damage.
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