Increase in the infrared response of silicide Schottky barrier diodes by grain boundary scattering
作者:
E. Roca,
K. Kyllesbech Larsen,
S. Kolodinski,
R. Mertens,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 10
页码: 1372-1374
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115537
出版商: AIP
数据来源: AIP
摘要:
The infrared response of polycrystalline and epitaxial CoSi2/Si Schottky diodes with similar silicide thickness has been measured. For the polycrystalline diodes the quantum efficiency is found to be two times higher than for the epitaxial diodes, although both types of diodes present very similar barrier height. The observed improvement is attributed to grain boundary scattering of the excited carriers. ©1995 American Institute of Physics.
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