We have determined the gap‐state profiles of phosphorus‐doped hydrogenated amorphous silicon before and after light soaking in a broader energy range [0.25–1.50 eV below the conduction‐band edge (Ec) ] by using several variations of isothermal capacitance transient spectroscopy. It is found that gap states are created in the range of 0.25–0.35 eV belowEc, which are attributed to31P‐related hyperfine electron‐spin‐resonance centers.