High‐power buried heterostructure InGaAsP/InP laser diodes produced by an improved regrowth process
作者:
D. Z. Garbuzov,
I. E. Berishev,
Yu. V. Ilyin,
N. D. Ilyinskaya,
A. V. Ovchinnikov,
N. A. Pikhtin,
I. S. Tarasov,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 72,
issue 1
页码: 319-321
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.352143
出版商: AIP
数据来源: AIP
摘要:
The paper describes preparation and performance of single lateral mode buried heterostructure InGaAsP/InP, &lgr;=1.3 &mgr;m, laser diodes. It is shown that an improvement in the mesa etching and regrowth techniques permits obtaining laser diodes whose threshold current densities are about 1 kA/cm2and are practically independent of stripe width. The diodes thus prepared had threshold currents of 8–20 mA at a cavity lengthL=200–500 &mgr;m and a stripe width about 2–3 &mgr;m. The maximum continuous wave power in single lateral mode operation was 160 mW.
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