首页   按字顺浏览 期刊浏览 卷期浏览 Selective dry etching of GaAs over AlGaAs in SF6/SiCl4mixtures
Selective dry etching of GaAs over AlGaAs in SF6/SiCl4mixtures

 

作者: S. Salimian,   C. B. Cooper,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 6  

页码: 1641-1644

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584422

 

出版商: American Vacuum Society

 

关键词: ETCHING;ALUMINIUM ARSENIDES;GALLIUM ARSENIDES;SULFUR CHLORIDES;SILICON CHLORIDES;SURFACE STRUCTURE;MORPHOLOGY;ANISOTROPY;SURFACE REACTIONS;THIN FILMS;SURFACE COATING;COATINGS;GaAs;(Ag,Ga)Al

 

数据来源: AIP

 

摘要:

Reactive ion etching of GaAs with high selectivity over Al0.29Ga0.71As in SF6/SiCl4mixtures was studied. Selectivity, surface morphology, and anisotropy were investigated over a wide range of pressures (15–100 mTorr), dc bias values (−20 to −300 V), and SF6‐to‐SiCl4ratios (0–0.5). Higher pressures, lower dc biases, and higher SF6/SiCl4ratios increase the GaAs‐to‐AlGaAs selectivity. Electron spectroscopy for chemical analysis indicates that the formation of nonvolatile aluminum fluoride on AlGaAs is responsible for the selective etch process.

 

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